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OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate
Yasuyuki MIYAMOTO Chiaki WATANABE Masashi NAGASHIMA Kazuhito FURUYA Yasuharu SUEMATSU Yuichi TOHMORI Shigehisa ARAI
IEICE TRANSACTIONS (1976-1990)
Publication Date: 1985/12/25
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics
Full Text: PDF(151KB)
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Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.