OMVPE Grown GaInAsP/InP BH Laser on p-Type Substrate

Yasuyuki MIYAMOTO  Chiaki WATANABE  Masashi NAGASHIMA  Kazuhito FURUYA  Yasuharu SUEMATSU  Yuichi TOHMORI  Shigehisa ARAI  

IEICE TRANSACTIONS (1976-1990)   Vol.E68    No.12    pp.796-797
Publication Date: 1985/12/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Optical and Quantum Electronics

Full Text: PDF>>
Buy this Article

Fabrication of 1.5 µm GaInAsP/InP laser by OMVPE on p-type substrate is reported. Low threshold current density (1.2 kA/cm2) was obtained by reduction of growth time in order to prevent Zn diffusion from substrate. CW operations at room temperature were obtained in buried heterostructure (BH) devices fabricated by OMVPE-LPE hybrid growth method. No degradation was observed after 2000 hours' aging test.