Josephson NDRO Memory Cell with a Direct-Coupled Sense Gate

Keiji ENPUKU  Kuniaki SUEOKA  Keiji YOSHIDA  Fujio IRIE  

IEICE TRANSACTIONS (1976-1990)   Vol.E67   No.6   pp.331-332
Publication Date: 1984/06/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Other Devices

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A new type of Josephson NDRO memory cell is presented, where a sense gate is coupled directly to the memory part, instead of the conventional magnetic coupling scheme. The memory cell operates without complexity of the sequence of signals, and the operation margin is shown to be 20%.