Properties of nm Bridge on Edge Junction

Katsuyoshi HAMASAKI  Kazutake MATSUMOTO  Yoshimitsu KODAIRA  Toranosuke KOMATA  Tsutomu YAMASHITA  

IEICE TRANSACTIONS (1976-1990)   Vol.E67   No.2   pp.123-124
Publication Date: 1984/02/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: LETTER
Category: Electron Devices

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Thermal oxidation and liftoff technique have been used to fabricate the niobium nm bridge on an edge junction. The bridges had an effective length of less than 50 nm and width of 2 µm. Experimental results of the threshold curves of the DC-SQUID at 4.2 K are in excellent agreement with calculations based on a sinusoidal current-phase relation. Very sharp microwave-induced steps were also observed, and the bridges were found to show Josephson effect in a wide range of temperature.