Double Boron-Ion Implanted Short Channel MOS FET for High Speed Static RAMs

Kazuo TERADA  

IEICE TRANSACTIONS (1976-1990)   Vol.E63   No.8   pp.567-573
Publication Date: 1980/08/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Semiconductors

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A short channel MOS FET with 1-1.5 µm channel and double boron-ion implantation has been designed as a high speed static RAM element. High speed properties and short channel effects are compared among the MOS FETs with 1.5-100 Ωcm substrate and several deep/shallow implant dose combinations. It is found that 40 Ωcm substrate or so with 4/45/31011 cm2 deep/shallow implant dose combination is most desirable.