Reliability Life Tests on an Encapsulated Millimeter-Wave DDR IMPATT Diode

Masamichi OHMORI  Masayuki INO  Masatomo FUJIMOTO  Hiroyuki NAGAO  Nobuhiko FUJINE  Kenji SEKIDO  

IEICE TRANSACTIONS (1976-1990)   Vol.E63   No.6   pp.409-413
Publication Date: 1980/06/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: PAPER
Category: Electron Devices

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The operating life for a newly developed millimeter-wave silicon DDR IMPATT diode, which is hermetically sealed in a mechanically rugged miniature ceramic package with a diamond heat sink, is evaluated by accelerated life tests consisting of high-temperature storage and high-temperature DC operation. A mean time to failure (MTTF) value of approximately 2.6105 h (3800 FIT) is predicted at a junction temperature of 235, where the diode is capable of delivering an output power of 100 to 150 mW at 80 CHz band. The predominant failure mode is a junction short caused by gold diffusion into the silicon layer. An rf operating life test is also conducted. There has been no failure for 12,000 h.