Measurement of Carrier Lifetimes in InGaAsP/InP Double Heterostructure Lasers

Shigeyuki AKIBA  Yoshio ITAYA  Kazuo SAKAI  Takaya YAMAMOTO  Yasuharu SUEMATSU  

IEICE TRANSACTIONS (1976-1990)   Vol.E61   No.3   pp.124-127
Publication Date: 1978/03/25
Online ISSN: 
Print ISSN: 0000-0000
Type of Manuscript: Special Section PAPER (Special Issue on Integrated Optics and Optical Fiber Communications)

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Spontaneous carrier lifetimes in InGaAsP/InP double heterostructure lasers emitting at1.3µm were experimentally determined from lasing delay time measarement. Various step-current superposed on bias current was applied to a laser diode with 20 µm-stripe geometry. The carrier lifetime apparently decreased with increasing bias current from 4-5 ns at non-biased state to2 ns at well biased state. This change in the measured lifetime was explained by considering the effect of junction capacitance. It was shown that the effect was almost removed by the application of bias current of more than1 kA・cm-2. µm-1 and then the intrinsic lifetime was obtained. Deduced carrier lifetime well agreed with that estimated from relaxation oscillation measurement.