Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures

Katsunori MAKIHARA
Tatsuya TAKEMOTO
Shuji OBAYASHI
Akio OHTA
Noriyuki TAOKA
Seiichi MIYAZAKI

Publication
IEICE TRANSACTIONS on Electronics   Vol.E105-C    No.10    pp.610-615
Publication Date: 2022/10/01
Publicized: 2022/04/26
Online ISSN: 1745-1353
DOI: 10.1587/transele.2021FUP0006
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Si quantum dots,  phosphorus,  δ-doping,  electron emission,  

Full Text: PDF>>
Buy this Article



Summary: 
We have fabricated two-tiered heterostructures consisting of phosphorus δ-doped Si quantum dots (Si-QDs) and undoped Si-QDs and studied their electron field emission properties. Electron emission was observed from the P-doped Si-QDs stack formed on the undoped Si-QDs stack by applying a forward bias of ∼6 V, which was lower than that for pure Si-QDs stack. This result is attributed to electric field concentration on the upper P-doped Si-QD layers beneath the layers of the undoped Si-QDs stack due to the introduction of phosphorus atom into the Si-QDs, which was positively charged due to the ionized P donor. The results lead to the development of planar-type electron emission devices with a low-voltage operation.