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A CMOS SPDT RF Switch with 68dB Isolation and 1.0dB Loss Feathering Switched Resonance Network for MIMO Applications
Xi FU Yun WANG Zheng LI Atsushi SHIRANE Kenichi OKADA
IEICE TRANSACTIONS on Electronics
Publication Date: 2021/07/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Ku-band, high-isolation, switched resonance network, SPDT, RF switches, millimeter-wave, CMOS, MIMO,
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There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.