A CMOS SPDT RF Switch with 68dB Isolation and 1.0dB Loss Feathering Switched Resonance Network for MIMO Applications

Zheng LI
Kenichi OKADA

IEICE TRANSACTIONS on Electronics   Vol.E104-C    No.7    pp.280-288
Publication Date: 2021/07/01
Publicized: 2021/01/08
Online ISSN: 1745-1353
DOI: 10.1587/transele.2020CDP0004
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Ku-band,  high-isolation,  switched resonance network,  SPDT,  RF switches,  millimeter-wave,  CMOS,  MIMO,  

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There are enlarged requirements of millimeter-wave beamforming phased-array transceivers and high-order modulation multi-input multi-output (MIMO) transceivers. High-performance integrated RF switches are regarded as one of the most critical components for those transceivers to support signal channel distribution and path redundancy. This paper introduces a CMOS high-isolation and low-loss RF switch with a novel switched parallel LC resonance network. The proposed single-pole double-throw (SPDT) RF switch realizes 68dB port isolation and 1.0dB insertion loss with an active area of 0.034mm2. The SPDT RF switch is composed of two series-shunt transistor pairs with body-floating technology and a switched parallel LC network. The network uses a turned-off series transistor to resonate out off-capacitance Coff. The measured output third-order intercept (OIP3) is higher than 21dBm. The proposed SPDT RF switch maintains return losses of all working ports less than 10dB from 8GHz to 20GHz. The high-performance SPDT RF switch is fabricated in standard 65-nm CMOS technology.