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Compact Model of Magnetic Tunnel Junctions for SPICE Simulation Based on Switching Probability
Haoyan LIU Takashi OHSAWA
IEICE TRANSACTIONS on Electronics
Publication Date: 2021/03/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
magnetic tunnel junctions (MTJ), spin transfer torque magnetic random-access memory (STT-MRAM), modeling, Verilog-A,
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We propose a compact magnetic tunnel junction (MTJ) model for circuit simulation by de-facto standard SPICE in this paper. It is implemented by Verilog-A language which makes it easy to simulate MTJs with other standard devices. Based on the switching probability, we smoothly connect the adiabatic precessional model and the thermal activation model by using an interpolation technique based on the cubic spline method. We can predict the switching time after a current is applied. Meanwhile, we use appropriate physical models to describe other MTJ characteristics. Simulation results validate that the model is consistent with experimental data and effective for MTJ/CMOS hybrid circuit simulation.