Simulation of the Short Channel Effect in GaN HEMT with a Combined Thin Undoped Channel and Semi-Insulating Layer

Yasuyuki MIYAMOTO  Takahiro GOTOW  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E103-C   No.6   pp.304-307
Publication Date: 2020/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2019FUS0002
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaN HEMT,  simulation,  short channel effect,  thin channel,  

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Summary: 
In this study, simulations are performed to design an optimal device for thinning the GaN channel layer on the semi-insulating layer in HEMT. When the gate length is 50nm, the thickness of the undoped channel must be thinner than 300nm to observe the off state. When the GaN channel layer is an Fe-doped, an on/off ratio of ~300 can be achieved even with a gate length of 25nm, although the transconductance is slightly reduced.