The Influence of High-Temperature Sputtering on the N-Doped LaB6 Thin Film Formation Utilizing RF Sputtering

Kyung Eun PARK  Shun-ichiro OHMI  

IEICE TRANSACTIONS on Electronics   Vol.E103-C   No.6   pp.293-298
Publication Date: 2020/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2019FUP0004
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
N-doped LaB6,  MOS diode,  Schottky diode,  effective work function,  RF sputtering,  

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In this paper, the influence of high-temperature sputtering on the nitrogen-doped (N-doped) LaB6 thin film formation utilizing RF sputtering was investigated. The N-doped LaB6/SiO2/p-Si(100) MOS diode and N-doped LaB6/p-Si(100) of Schottky diode were fabricated. A 30 nm thick N-doped LaB6 thin film was deposited from room temperature (RT) to 150°C. It was found that the resistivity was decreased from 1.5 mΩcm to 0.8 mΩcm by increasing deposition temperature from RT to 150°C. The variation of work function was significantly decreased in case that N-doped LaB6 thin film deposited at 150°C. Furthermore, Schottky characteristic was observed by increasing deposition temperature to 150°C. In addition, the crystallinity of N-doped LaB6 thin film was improved by increasing deposition temperature.