The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process

Rengie Mark D. MAILIG  Min Gee KIM  Shun-ichiro OHMI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E103-C   No.6   pp.286-292
Publication Date: 2020/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2019FUP0006
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Electronic Materials
Keyword: 
PdEr-silicide,  TiN encapsulating layer,  dopant segregation process,  Schottky barrier height,  

Full Text: PDF(4.2MB)>>
Buy this Article




Summary: 
In this paper, the effects of the TiN encapsulating layer and the dopant segregation process on the interface properties and the Schottky barrier height reduction of PdEr-silicide/n-Si(100) were investigated. The results show that controlling the initial location of the boron dopants by adding the TiN encapsulating layer lowered the Schottky barrier height (SBH) for hole to 0.20 eV. Furthermore, the density of interface states (Dit) on the order of 1011eV-1cm-2 was obtained indicating that the dopant segregation process with TiN encapsulating layer effectively annihilated the interface states.