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Evaluation of Heavy-Ion-Induced Single Event Upset Cross Sections of a 65-nm Thin BOX FD-SOI Flip-Flops Composed of Stacked Inverters
IEICE TRANSACTIONS on Electronics
Publication Date: 2020/04/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
Category: Electronic Circuits
single event effect, soft error, heavy ion irradiation, FDSOI, flip flop, device simulation,
Full Text: PDF(1.2MB)>>
Cross sections that cause single event upsets by heavy ions are sensitive to doping concentration in the source and drain regions, and the structure of the raised source and drain regions especially in FDSOI. Due to the parasitic bipolar effect (PBE), radiation-hardened flip flops with stacked transistors in FDSOI tend to have soft errors, which is consistent with measurement results by heavy-ion irradiation. Device-simulation results in this study show that the cross section is proportional to the silicon thickness of the raised layer and inversely proportional to the doping concentration in the drain. Increasing the doping concentration in the source and drain region enhance the Auger recombination of carriers there and suppresses the parasitic bipolar effect. PBE is also suppressed by decreasing the silicon thickness of the raised layer. Cgg-Vgs and Ids-Vgs characteristics change smaller than soft error tolerance change. Soft error tolerance can be effectively optimized by using these two determinants with only a small impact on transistor characteristics.