Co-Design of Binary Processing in Memory ReRAM Array and DNN Model Optimization Algorithm

Yue GUAN  Takashi OHSAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E103-C   No.11   pp.685-692
Publication Date: 2020/11/01
Publicized: 2020/05/13
Online ISSN: 1745-1353
DOI: 10.1587/transele.2019ECP5046
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
neuromorphic ReRAM,  binary neural network,  fabrication fluctuation,  

Full Text: PDF(1.2MB)>>
Buy this Article




Summary: 
In recent years, deep neural network (DNN) has achieved considerable results on many artificial intelligence tasks, e.g. natural language processing. However, the computation complexity of DNN is extremely high. Furthermore, the performance of traditional von Neumann computing architecture has been slowing down due to the memory wall problem. Processing in memory (PIM), which places computation within memory and reduces the data movement, breaks the memory wall. ReRAM PIM is thought to be a available architecture for DNN accelerators. In this work, a novel design of ReRAM neuromorphic system is proposed to process DNN fully in array efficiently. The binary ReRAM array is composed of 2T2R storage cells and current mirror sense amplifiers. A dummy BL reference scheme is proposed for reference voltage generation. A binary DNN (BDNN) model is then constructed and optimized on MNIST dataset. The model reaches a validation accuracy of 96.33% and is deployed to the ReRAM PIM system. Co-design model optimization method between hardware device and software algorithm is proposed with the idea of utilizing hardware variance information as uncertainness in optimization procedure. This method is analyzed to achieve feasible hardware design and generalizable model. Deployed with such co-design model, ReRAM array processes DNN with high robustness against fabrication fluctuation.