Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Takayuki MORI  Jiro IDA  Hiroki ENDO  

IEICE TRANSACTIONS on Electronics   Vol.E103-C   No.10   pp.533-542
Publication Date: 2020/10/01
Publicized: 2020/04/23
Online ISSN: 1745-1353
DOI: 10.1587/transele.2020ECP5005
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
feedback,  floating body effect,  pulse measurement,  SOI MOSFET,  steep subthreshold slope,  thyristor,  transient,  

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In this study, the transient characteristics on the super-steep subthreshold slope (SS) of a PN-body tied (PNBT) silicon-on-insulator field-effect transistor (SOI-FET) were investigated using technology computer-aided design and pulse measurements. Carrier charging effects were observed on the super-steep SS PNBT SOI-FET. It was found that the turn-on delay time decreased to nearly zero when the gate overdrive-voltage was set to 0.1-0.15 V. Additionally, optimizing the gate width improved the turn-on delay. This has positive implications for the low speed problems of this device. However, long-term leakage current flows on turn-off. The carrier lifetime affects the leakage current, and the device parameters must be optimized to realize both a high on/off ratio and high-speed operation.