Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output

Khotimatul FAUZIAH  Yuhei SUZUKI  Yuki NARITA  Yoshinari KAMAKURA  Takanobu WATANABE  Faiz SALLEH  Hiroya IKEDA  

IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.6   pp.475-478
Publication Date: 2019/06/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018FUS0003
Type of Manuscript: BRIEF PAPER
Si,  thermopile,  Seebeck coefficient,  phonon drag,  

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In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.