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Effect of Phonon-Drag Contributed Seebeck Coefficient on Si-Wire Thermopile Voltage Output
Khotimatul FAUZIAH Yuhei SUZUKI Yuki NARITA Yoshinari KAMAKURA Takanobu WATANABE Faiz SALLEH Hiroya IKEDA
IEICE TRANSACTIONS on Electronics
Publication Date: 2019/06/01
Online ISSN: 1745-1353
Type of Manuscript: BRIEF PAPER
Si, thermopile, Seebeck coefficient, phonon drag,
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In order to optimize the performance of thermoelectric devices, we have fabricated and characterized the micrometer-scaled Si thermopile preserving the phonon-drag effect, where the Si thermopile consists of p- and n-type Si wire pairs. The measured Seebeck coefficient of the p-type Si wire was found to be higher than the theoretical value calculated only from the carrier transport, which indicates the contribution of phonon-drag part. Moreover, the measured Seebeck coefficient increased with increasing the width of Si wire. This fact is considered due to dependency of phonon-drag part on the wire width originating from the reduction of phonon-boundary scattering. These contributions were observed also in measured output voltage of Si-wire thermopile. Hence, the output voltage of Si-wire thermopile is expected can be enhanced by utilizing the phonon-drag effect in Si wire by optimizing its size and carrier concentration.