High-Frequency and Integrated Design Based on Flip-Chip Interconnection Technique (Hi-FIT) for High-Speed (>100 Gbaud) Optical Devices

Shigeru KANAZAWA  Hiroshi YAMAZAKI  Yuta UEDA  Wataru KOBAYASHI  Yoshihiro OGISO  Johsuke OZAKI  Takahiko SHINDO  Satoshi TSUNASHIMA  Hiromasa TANOBE  Atsushi ARARATAKE  

IEICE TRANSACTIONS on Electronics   Vol.E102-C    No.4    pp.340-346
Publication Date: 2019/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018ODI0001
Type of Manuscript: Special Section INVITED PAPER (Special Section on Progress in Optical Device Technology for Increasing Data Transmission Capacity)
flip-chip,  EA-DFB laser,  Mach-Zehnder modulator,  packaging,  

Full Text: FreePDF(1.9MB)

We developed a high-frequency and integrated design based on a flip-chip interconnection technique (Hi-FIT) as a wire-free interconnection technique that provides a high modulation bandwidth. The Hi-FIT can be applied to various high-speed (>100 Gbaud) optical devices. The Hi-FIT EA-DFB laser module has a 3-dB bandwidth of 59 GHz. And with a 4-intensity-level pulse amplitude modulation (PAM) operation at 107 Gbaud, we obtained a bit-error rate (BER) of less than 3.8×10-3, which is an error-free condition, by using a 7%-overhead (OH) hard-decision forward error correction (HD-FEC) code, even after a 10-km SMF transmission. The 3-dB bandwidth of the Hi-FIT employing an InP-MZM sub-assembly was more than 67 GHz, which was the limit of our measuring instrument. We also demonstrated a 120-Gbaud rate IQ modulation.