Fabrication of the Flexible Dual-Gate OFET Based Organic Pressure Sensor

Tatsuya ISHIKAWA  Heisuke SAKAI  Hideyuki MURATA  

IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.2   pp.188-191
Publication Date: 2019/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018OMS0013
Type of Manuscript: BRIEF PAPER
flexible substrate,  pressure sensor,  organic field-effect transistor,  P(VDF/TrFE),  dual-gate organic transistor,  

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We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.