Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor

Yasuyuki ABE  Heisuke SAKAI  Toan Thanh DAO  Hideyuki MURATA  

IEICE TRANSACTIONS on Electronics   Vol.E102-C   No.2   pp.184-187
Publication Date: 2019/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2018OMS0012
Type of Manuscript: BRIEF PAPER
threshold voltage control,  low-voltage,  organic field effect transistor,  

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We report the control of threshold voltage (Vth) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO2. We succeeded in realizing a driving voltage of -5V and Vth shift by c.a. 1.0V. And programmed Vth was almost unchanged for 104s, where the relative change of Vth remains more than 99%.