GaN Amplifiers of Selectable Output Power Function with Semi-Custom Matching Networks

Yutaro YAMAGUCHI  Masatake HANGAI  Shintaro SHINJO  Takaaki YOSHIOKA  Naoki KOSAKA  

IEICE TRANSACTIONS on Electronics   Vol.E102-C    No.10    pp.682-690
Publication Date: 2019/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.2019MMP0005
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technologies)
gallium nitride,  high power amplifiers,  S-band,  broadband amplifiers,  impedance matching tuning,  

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A methodology for obtaining semi-custom high-power amplifiers (HPAs) is described. The semi-custom concept pertains to the notion that a selectable output power is attainable by replacing only transistors. To compensate for the mismatch loss, a new output matching network that can be easily tuned by wiring is proposed. Design equations were derived to determine the circuit parameters and specify the bandwidth limitations. To verify this methodology, a semi-custom HPA with GaN HEMTs was fabricated in the S-band. A selectable output power from 240 to 150 W was successfully achieved while maintaining a PAE of over 50% in a 19% relative bandwidth.