A 2-5GHz Wideband Inductorless Low Noise Amplifier for LTE and Intermediate-Frequency-Band 5G Applications

Youming ZHANG  Fengyi HUANG  Lijuan YANG  Xusheng TANG  Zhen CHEN  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E102-A   No.1   pp.209-210
Publication Date: 2019/01/01
Online ISSN: 1745-1337
DOI: 10.1587/transfun.E102.A.209
Type of Manuscript: Special Section LETTER (Special Section on Wideband Systems)
Category: 
Keyword: 
5G,  cross-coupled buffer,  low-noise amplifier (LNA),  noise cancellation,  wideband,  

Full Text: PDF(983.3KB)>>
Buy this Article




Summary: 
This paper presents a wideband inductorless noise-cancelling balun LNA with two gain modes, low NF, and high-linearity for LTE and intermediate-frequency-band (eg. 3.3-3.6GHz, 4.8-5GHz) 5G applications fabricated in 65nm CMOS. The proposed LNA is bonding tested and exhibits a minimum NF of 2.2dB and maximum IIP3 of -3.5dBm. Taking advantage of an off-chip bias inductor in CG stage and a cross-coupled buffer, the LNA occupies high operation frequency up to 5GHz with remarkable linearity and NF as well as compact area.