Thermally Assisted Superconductor Transistors for Josephson-CMOS Hybrid Memories

Kyosuke SANO  Masato SUZUKI  Kohei MARUYAMA  Soya TANIGUCHI  Masamitsu TANAKA  Akira FUJIMAKI  Masumi INOUE  Nobuyuki YOSHIKAWA  

IEICE TRANSACTIONS on Electronics   Vol.E101-C   No.5   pp.370-377
Publication Date: 2018/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.370
Type of Manuscript: INVITED PAPER (Special Section on Innovative Superconducting Devices Based on New Physical Phenomena)
nanodevices,  thermally assisted device,  single-flux-quantum logic,  superconducting integrated circuits,  

Full Text: FreePDF

We have studied on thermally assisted nano-structured transistors made of superconductor ultra-thin films. These transistors potentially work as interface devices for Josephson-CMOS (complementary metal oxide semiconductor) hybrid memory systems, because they can generate a high output voltage of sub-V enough to drive a CMOS transistor. In addition, our superconductor transistors are formed with very fine lines down to several tens of nm in widths, leading to very small foot print enabling us to make large capacity hybrid memories. Our superconductor transistors are made with niobium titanium nitride (NbTiN) thin films deposited on thermally-oxidized silicon substrates, on which other superconductor circuits or semiconductor circuits can be formed. The NbTiN thickness dependence of the critical temperature and of resistivity suggest thermally activated vortex or anti-vortex behavior in pseudo-two-dimensional superconducting films plays an important role for the operating principle of the transistors. To show the potential that the transistors can drive MOS transistors, we analyzed the driving ability of the superconductor transistors with HSPICE simulation. We also showed the turn-on behavior of a MOS transistor used for readout of a CMOS memory cell experimentally. These results showed the high potential of superconductor transistors for Josephson-CMOS hybrid memories.