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Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes
Yasutaka MAEDA Mizuha HIROKI Shun-ichiro OHMI
IEICE TRANSACTIONS on Electronics
Publication Date: 2018/05/01
Online ISSN: 1745-1353
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
pentacene, N-doped LaB6, OFET, bottom-contact electrodes, surface treatment, electron injection,
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In this study, the effect of nitrogen-doped (N-doped) LaB6 bottom-contact electrodes and interfacial layer (IL) on n-type pentacene-based organic field-effect transistor (OFET) was investigated. The scaled OFET was fabricated by using photolithography for bottom-contact electrodes. A 20-nm-thick N-doped LaB6 bottom-contact electrodes were formed on SiO2/n+-Si(100) substrate by RF sputtering followed by the surface treatment with sulfuric acid and hydrogen peroxide mixture (SPM) followed by diluted hydrofluoric acid (DHF; 1% HF) at room temperature (RT). Then, a 1.2-nm-thick N-doped LaB6 IL was deposited at RT. Finally, a 10-nm-thick pentacene film was deposited at 100°C followed by the Al back-gate electrode formation by using thermal evaporation. The current of electron injection was observed in the air due to the effect of surface treatment and N-doped LaB6 IL.