Room-Temperature Atomic Layer Deposition of SnO2 Using Tetramethyltin and Its Application to TFT Fabrication

Kentaro TOKORO  Shunsuke SAITO  Kensaku KANOMATA  Masanori MIURA  Bashir AHMMAD  Shigeru KUBOTA  Fumihiko HIROSE  

IEICE TRANSACTIONS on Electronics   Vol.E101-C    No.5    pp.317-322
Publication Date: 2018/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E101.C.317
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
ALD,  SnO2,  IR absorption spectroscopy,  TFT,  

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We report room-temperature atomic layer deposition (ALD) of SnO2 using tetramethyltin (TMT) as a precursor and plasma-excited humidified argon as an oxidizing gas and investigate the saturation behaviors of these gases on SnO2-covered Si prisms by IR absorption spectroscopy to determine optimal precursor/oxidizer injection conditions. TMT is demonstrated to adsorb on the SnO2 surface by reacting with surface OH groups, which are regenerated by oxidizing the TMT-saturated surface by plasma-excited humidified argon. We provide a detailed discussion of the growth mechanism. We also report the RT ALD application to the RT TFT fabrication.