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Possibilities of Large Voltage Swing HardType Oscillators Based on SeriesConnected Resonant Tunneling Diodes
Koichi MAEZAWA Masayuki MORI
Publication
IEICE TRANSACTIONS on Electronics
Vol.E101C
No.5
pp.305310 Publication Date: 2018/05/01 Online ISSN: 17451353
DOI: 10.1587/transele.E101.C.305 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resonant tunneling diode, hardtype oscillator, HEMT, spurious oscillation, voltage swing,
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Summary:
Hardtype oscillators for ultrahigh frequency applications were proposed based on resonant tunneling diodes (RTDs) and a HEMT trigger circuit. The hardtype oscillators initiate oscillation only after external excitation. This is advantageous for suppressing the spurious oscillation in the bias line, which is one of the most significant problems in the RTD oscillators. We first investigated a seriesconnected circuit of a resistor and an RTD for constructing a hardtype oscillator. We carried out circuit simulation using the practical device parameters. It was demonstrated that the stable oscillation can be obtained for such oscillators. Next, we proposed to use seriesconnected RTDs for the gain block of the hardtype oscillators. The series circuits of RTDs show the negative differential resistance in very narrow regions, or no regions at all, which makes impossible to use such circuits for the conventional softtype oscillators. However, with the trigger circuit, they can be used for hardtype oscillators. We confirmed the oscillation and the bias stability of these oscillators, and also demonstrated that the voltage swing can be easily increased by increasing the number of RTDs connected in series. This is promising method to overcome the power restriction of the RTD oscillators.

