Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers

Masaru SATO  Yoshitaka NIIDA  Toshihide SUZUKI  Yasuhiro NAKASHA  Yoichi KAWANO  Taisuke IWAI  Naoki HARA  Kazukiyo JOSHIN  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.5   pp.417-423
Publication Date: 2017/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.417
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifier,  GaN HEMT,  InP HEMT,  low noise amplifier,  

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Summary: 
We report on robust and low-power-consumption InP- and GaN-HEMT Low-Noise-Amplifiers (LNAs) operating in Q-band frequency range. A multi-stage common-gate (CG) amplifier with current reuse topology was used. To improve the survivability of the CG amplifier, we introduced a feedback resistor at the gate bias feed. The design technique was adapted to InP- and GaN-HEMT LNAs. The 75nm gate length InP HEMT LNA exhibited a gain of 18dB and a noise figure (NF) of 3dB from 33 to 50GHz. The DC power consumption was 16mW. The Robustness of the InP HEMT LNA was tested by injecting a millimeter-wave input power of 13dBm for 10 minutes. No degradation in a small signal gain was observed. The fabricated 0.12µm gate length GaN HEMT LNA exhibited a gain of 15dB and an NF of 3.2dB from 35 to 42GHz. The DC power consumption was 280mW. The LNA survived until an input power of 28dBm.