A 1.9GHz Low-Phase-Noise Complementary Cross-Coupled FBAR-VCO without Additional Voltage Headroom in 0.18µm CMOS Technology

Guoqiang ZHANG  Awinash ANAND  Kousuke HIKICHI  Shuji TANAKA  Masayoshi ESASHI  Ken-ya HASHIMOTO  Shinji TANIGUCHI  Ramesh K. POKHAREL  

IEICE TRANSACTIONS on Electronics   Vol.E100-C    No.4    pp.363-369
Publication Date: 2017/04/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.363
Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design — Architecture, Circuit, Device and Design Methodology)
complementary cross-coupled VCO,  DC latch,  FBAR-VCO,  parasitic oscillation,  phase noise,  

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A 1.9GHz film bulk acoustic resonator (FBAR)-based low-phase-noise complementary cross-coupled voltage-controlled oscillator (VCO) is presented. The FBAR-VCO is designed and fabricated in 0.18µm CMOS process. The DC latch and the low frequency instability are resolved by employing the NMOS source coupling capacitor and the DC blocked cross-coupled pairs. Since no additional voltage headroom is required, the proposed FBAR-VCO can be operated at a low power supply voltage of 1.1V with a wide voltage swing of 0.9V. An effective phase noise optimization is realized by a reasonable trade-off between the output resistance and the trans-conductance of the cross-coupled pairs. The measured performance shows the proposed FBAR-VCO achieves a phase noise of -148dBc/Hz at 1MHz offset with a figure of merit (FoM) of -211.6dB.