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Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method
Eiji HIGURASHI Ken OKUMURA Yutaka KUNIMUNE Tadatomo SUGA Kei HAGIWARA
IEICE TRANSACTIONS on Electronics
Publication Date: 2017/02/01
Online ISSN: 1745-1353
Type of Manuscript: INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
heterogeneous integration, room-temperature bonding, surface-activated bonding, Au-Au bonding,
Full Text: FreePDF
Wafers with smooth Au thin films (rms surface roughness: < 0.5nm, thickness: < 50nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a sufficiently high die-shear strength of 47-70MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.