Dry Etching Technologies of Optical Device and III-V Compound Semiconductors

Ryuichiro KAMIMURA  Kanji FURUTA  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.2   pp.150-155
Publication Date: 2017/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.150
Type of Manuscript: INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
optical device,  III-V compound semiconductor,  dry etching,  LD,  LED,  glass,  

Full Text: FreePDF

Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.