For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
Ryuichiro KAMIMURA Kanji FURUTA
IEICE TRANSACTIONS on Electronics
Publication Date: 2017/02/01
Online ISSN: 1745-1353
Type of Manuscript: INVITED PAPER (Special Section on Fabrication Technologies Supporting the Photonic/Nanostructure Devices)
optical device, III-V compound semiconductor, dry etching, LD, LED, glass,
Full Text: FreePDF(3.5MB)
Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly.