Integration of a Low-Voltage Organic Field-Effect Transistor and a Sensing Capacitor for a Pressure-Sensing Device

Heisuke SAKAI  Yushi TSUJI  Hideyuki MURATA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E100-C    No.2    pp.126-129
Publication Date: 2017/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.126
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
low-voltage operation,  pressure sensor,  organic field-effect transistor,  ferroelectric polymer,  

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Summary: 
We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.