Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes

Cuong Manh TRAN  Tatsuya MURAKAMI  Heisuke SAKAI  Hideyuki MURATA  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.2   pp.122-125
Publication Date: 2017/02/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.122
Type of Manuscript: BRIEF PAPER
pentacene OFETs,  organic electronics,  

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We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (Vth) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.