600V 30A SiC IPM with Low Power Loss for Motor Drive Applications

Qing HUA  Gongtang WANG  Jianhui SUN  Chunxing WANG  

IEICE TRANSACTIONS on Electronics   Vol.E100-C   No.10   pp.938-941
Publication Date: 2017/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E100.C.938
Type of Manuscript: BRIEF PAPER
Category: Semiconductor Materials and Devices
intelligent power module (IPM),  power loss,  SiC,  

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This paper presents a SiC intelligent power module (IPM) which features low power loss. It is designed specifically for high performance low power motor drive applications including fans, refrigerator and air conditioner compressor drives, where energy efficiency is a major concern. The IPM utilizes 600 V planar-type SiC metal oxide semiconductor field effect transistors (MOSFETs) as the power switching devices to deliver immensely low conduction and switching losses. Moreover, 600 V SiC schottky barrier diodes (SBDs) are adopted as the freewheeling diodes. In comparison with conventional silicon fast recovery diodes (FRDs), SiC SBDs exhibit practically no reverse recovery loss and can further diminish the power loss of the IPM. Besides, combined with these SiC power devices the proposed IPM is able to operate at a higher temperature up to 175°C while maintaining very low leakage current. Experimental results indicate that the power loss of the proposed IPM is between 2.2∼17 W at different compressor frequencies from 10 to 70 Hz, which can realize up to 32%∼53% improvement when compared to state-of-the-art conventional Si-based insulated gate bipolar transistor (IGBT) IPM.