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Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI
IEICE TRANSACTIONS on Electronics
Publication Date: 2017/10/01
Online ISSN: 1745-1353
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
MONOS, archive memories, charge trap memories, first principals calculation,
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We demonstrate on the basis of ab initio calculations that metal-oxide-nitride-oxide-semiconductor (MONOS) memory is one of the most promising future high-density archive memories. We find that O related defects in a MONOS memory cause irreversible structural changes to the SiO2/Si3N4 interface at the atomistic level during program/erase (P/E) cycles. Carrier injection during the programming operation makes the structure energetically very stable, because all the O atoms in this structure take on three-fold-coordination. The estimated lifespan of the programmed state is of the order of a thousand years.