Keyword : write time


Long-Retention-Time, High-Speed DRAM Array with 12-F2 Twin Cell for Sub 1-V Operation
Riichiro TAKEMURA Kiyoo ITOH Tomonori SEKIGUCHI Satoru AKIYAMA Satoru HANZAWA Kazuhiko KAJIGAYA Takayuki KAWAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C  No. 4 ; pp. 758-764
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies)
Category: Memory
Keyword: 
twin-cell DRAM arraywrite timelow voltage RAMretention timeand plate-driven cell
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