Publication: IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A
No. 1 ;
pp. 158-165
Type of Manuscript:
Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword:
T-Shaped gate HEMT, von Mises stress, recess depth, stress concentration, |