Keyword : volume inversion


Source/Drain Engineering for High Performance Vertical MOSFET
Takuya IMAMOTO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 807-813
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Vertical MOSFETvolume inversionbody channelgate-all-aroundsource/drain profilefloating body
 Summary | Full Text:PDF

Compact Double-Gate Metal-Oxide-Semiconductor Field Effect Transistor Model for Device/Circuit Optimization
Norio SADACHIKA Takahiro MURAKAMI Hideki OKA Ryou TANABE Hans Juergen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8 ; pp. 1379-1381
Type of Manuscript:  LETTER
Category: Semiconductor Materials and Devices
Keyword: 
double gate MOSFETHiSIMcircuit simulationvolume inversion
 Summary | Full Text:PDF