Keyword : vertical MOSFET


A High Output Resistance 1.2-V VDD Current Mirror with Deep Submicron Vertical MOSFETs
Satoru TANOI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5 ; pp. 423-430
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current mirrorlow VDDvertical MOSFEToutput resistanceshort channel effect
 Summary | Full Text:PDF

A High Performance Current Latch Sense Amplifier with Vertical MOSFET
Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 655-662
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
current latch sense amplifiervertical MOSFETSRAMsensing timespeedcurrentvoltage gainstabilityyieldcircuit area
 Summary | Full Text:PDF

A Schmitt Trigger Based SRAM with Vertical MOSFET
Hyoungjun NA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 792-801
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Schmitt Trigger based SRAM (ST SRAM)6T SRAMvertical MOSFETcell sizestabilitystatic noise margin (SNM)speed performanceread timeread current
 Summary | Full Text:PDF

Impact of Floating Body Type DRAM with the Vertical MOSFET
Yuto NORIFUSA Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 705-711
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
floating body type DRAM1T-DRAMmemory architecturevertical MOSFET3D structured deviceLSI
 Summary | Full Text:PDF

Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5 ; pp. 737-742
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical MOSFETquantum electron dynamicsimpuritytime-dependent schrodinger equationsource edge
 Summary | Full Text:PDF

Sub-10 nm Multi-Nano-Pillar Type Vertical MOSFET
Tetsuo ENDOH Koji SAKUI Yukio YASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 557-562
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFET3D structured deviceMOSFETLSI
 Summary | Full Text:PDF

Study on Quantum Electro-Dynamics in Vertical MOSFET
Masakazu MURAGUCHI Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5 ; pp. 552-556
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
Keyword: 
vertical MOSFETquantum electro-dynamicsresonant tunnelingsurrounding gatetime-dependent Schrodinger equation
 Summary | Full Text:PDF