Keyword : velocity overshoot


Efficient Full-Band Monte Carlo Simulation of Silicon Devices
Christoph JUNGEMANN Stefan KEITH Martin BARTELS Bernd MEINERZHAGEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 870-879
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
siliconfull-band Monte Carlomicroscopic relaxation timevelocity overshootimpact ionizationdrift-diffusiondeep submicron NMOSFET
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A Study of Electrical Characteristics Improvements in Sub-0.1 µm Gate Length MOSFETs by Low Temperature Operation
Morikazu TSUNO Shin YOKOYAMA Kentaro SHIBAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/12/25
Vol. E81-C  No. 12 ; pp. 1913-1917
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETlow temperaturevelocity overshootSbnonsteady-stationary effectimpact ionizationhot-carrier
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Monte Carlo Analysis of Velocity Overshoot Effects in Bipolar Devices with and without an i-Layer
Yoshiroh TSUBOI Claudio FIFGNA Enrico SANGIORGI Bruno RICCÒ Tetsunori WADA Yasuhiro KATSUMATA Hiroshi IWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 174-178
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
bipolar transistori-layercollector signal delayvelocity overshoot
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Influence of Energy Transport Related Effects on NPN BJT Device Performance and ECL Gate Delay Analysed by 2D Parallel Mixed Level Device/Circuit Simulation
Matthias STECHER Bernd MEINERZHAGEN Ingo BORK Joachim M. J. KRÜCKEN Peter MAAS Walter L. ENGL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2 ; pp. 200-205
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Coupled Device & Circuit Modeling
Keyword: 
hydrodynamic modelvelocity overshootcircuit performance
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Simulation of Velocity Overshoot and Hot Carrier Effects in Thin-Film SOI-nMOSFETs
Kazuya MATSUZAWA Minoru TAKAHASHI Makoto YOSHIMI Naoyuki SHIGYO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12 ; pp. 1477-1483
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Hot Carrier
Keyword: 
SOIenergy transportvelocity overshoothot carrier
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