Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-CNo. 2 ;
pp. 106-111 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: transient enhanced diffusion, two-dimension, phosphorus, silicon, shallow junction, furnace annealing,