Keyword : turn-on voltage


Performance of InP/InGaAs HBTs with a Thin Highly N-Type Doped Layer in the Emitter-Base Heterojunction Vicinity
Kenji KURISHIMA Minoru IDA Norihide KASHIO Yoshino K. FUKAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8 ; pp. 1310-1316
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InPInGaAsHBTturn-on voltage
 Summary | Full Text:PDF

Low Vbe GaInAsN Base Heterojunction Bipolar Transistors
Roger E. WELSER Paul M. DELUCA Alexander C. WANG Noren PAN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10 ; pp. 1389-1393
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: III-V HBTs
Keyword: 
InGaP/GaAs HBTAlGaAs/GaAs HBTGaInNAsbipolar transistorturn-on voltage
 Summary | Full Text:PDF