Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C
No. 3 ;
pp. 379-384
Type of Manuscript:
Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword:
tantalum oxide, rapid thermal nitridation (RTN), SiO2 equivalent thickness, leakage current, time dependent dielectric breakdown (TDDB), |