Keyword : threshold voltage


Study on Threshold Voltage Variation Evaluated by Charge-Based Capacitance Measurement
Katsuhiro TSUJI Kazuo TERADA Ryo TAKEDA Hisato FUJISAKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/04/01
Vol. E99-C  No. 4 ; pp. 466-473
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFETC-V curveCBCMthreshold voltageflat-band voltagevariation
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Compact Analytical Threshold Voltage Model of Strained Gate-All-Around MOSFET Fabricated on Si1-xGex Virtual Substrate
Yefei ZHANG Zunchao LI Chuang WANG Feng LIANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2016/02/01
Vol. E99-C  No. 2 ; pp. 302-307
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
compact modelingthreshold voltagestrained silicongate-all-around MOSFETSi1-xGex virtual substrate
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Lowering of Threshold Voltage by Thermal Annealing of Diamond Micropowder Field Emitter
Tomomi YOSHIMOTO Yoshiaki SUGIMOTO Tatsuo IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2015/10/01
Vol. E98-C  No. 10 ; pp. 995-998
Type of Manuscript:  BRIEF PAPER
Category: Electron Tubes, Vacuum and Beam Technology
Keyword: 
diamondmicropowdersfield emissionthreshold voltage
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Photo-Induced Threshold and Onset Voltage Shifts in Organic Thin-Film Transistors
Ichiro FUJIEDA Tse Nga NG Tomoya HOSHINO Tomonori HANASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/11/01
Vol. E96-C  No. 11 ; pp. 1360-1366
Type of Manuscript:  INVITED PAPER (Special Section on Electronic Displays)
Category: 
Keyword: 
organic transistorpersistent photoconductivitythreshold voltageonset voltage
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Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
Tomoko MIZUTANI Anil KUMAR Toshiro HIRAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5 ; pp. 630-633
Type of Manuscript:  BRIEF PAPER
Category: 
Keyword: 
variabilityMOS transistorthreshold voltageDIBLnormal distributionGumbel distribution
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Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5 ; pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Tunnel Field-Effect Transistorsthreshold voltageVT-control doping region
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On-Chip Temperature Compensation Active Bias Circuit Having Tunable Temperature Slope for GaAs FET MMIC PA
Shintaro SHINJO Kazutomi MORI Tomokazu OGOMI Yoshihiro TSUKAHARA Mitsuhiro SHIMOZAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/10/01
Vol. E94-C  No. 10 ; pp. 1498-1507
Type of Manuscript:  Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices and Circuits
Keyword: 
temperature compensationMMIC power amplifiersGaAs FETthreshold voltage
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A High-Throughput On-Chip Variation Monitoring Circuit for MOSFET Threshold Voltage Using VCDL and Time-to-Digital Converter
Jae-seung LEE Jae-Yoon SIM Hong June PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1333-1337
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
on-chip variation monitoringthreshold voltagetime-to-digital converter (TDC)voltage controlled delay line (VCDL)
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Analysis of Passivation-Film-Induced Stress Effects on Electrical Properties in AlGaN/GaN HEMTs
Naoteru SHIGEKAWA Suehiro SUGITANI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1212-1217
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
GaNHEMTthreshold voltagepiezoelectric effectsfilm stress
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Control of P3HT-FET Characteristics by Post-Treatments
Masaaki IIZUKA Hiroshi YAMAUCHI Kazuhiro KUDO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/12/01
Vol. E91-C  No. 12 ; pp. 1848-1851
Type of Manuscript:  Special Section PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category: Transistors
Keyword: 
organic field-effect transistorP3HTthreshold voltagepost-treatmentthermal treatment
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An Ultra Low-Voltage Ultra Low-Power CMOS Threshold Voltage Reference
Luis H.C. FERREIRA Tales C. PIMENTA Robson L. MORENO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/10/01
Vol. E90-C  No. 10 ; pp. 2044-2050
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
threshold voltagevoltage referenceultra low-powerultra low-voltage
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Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage
Yong CAI Yugang ZHOU Kei May LAU Kevin J. CHEN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1025-1030
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
enhancement modeAlGaN/GaNHEMTfluorideplasma treatmentthreshold voltage
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Temperature and Illumination Dependence of AlGaN/GaN HFET Threshold Voltage
Masaya OKADA Ryohei TAKAKI Daigo KIKUTA Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7 ; pp. 1042-1046
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
AlGaN/GaN HFETsthreshold voltagetemperature coefficientilluminationbuffer layer
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Threshold Voltage Mismatch of FD-SOI MOSFETs
Yoshiyuki SHIMIZU Toshimasa MATSUOKA Kenji TANIGUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/06/01
Vol. E87-C  No. 6 ; pp. 1013-1014
Type of Manuscript:  Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: 
Keyword: 
threshold voltageFD-SOIfloating body effectDIBL
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A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement
Han-Yu CHEN Kun-Ming CHEN Guo-Wei HUANG Chun-Yen CHANG Tiao-Yuan HUANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/05/01
Vol. E87-C  No. 5 ; pp. 726-732
Type of Manuscript:  Special Section PAPER (Special Section on Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devices and Circuits)
Category: Active Devices and Circuits
Keyword: 
threshold voltageeffective channel lengthchannel mobilityS-parameterautomatic measurement
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Low-Power Multiple-Valued Current-Mode Logic Using Substrate Bias Control
Akira MOCHIZUKI Takahiro HANYU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4 ; pp. 582-588
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
differential-pair circuitsubstrate bias controldynamic power dissipationthreshold voltagelow-power VLSIleakage current
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A Physical Synthesis Methodology for Multi-Threshold-Voltage Design in Low-Power Embedded Processor
Toshihiro HATTORI Kenji OGURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/04/01
Vol. E87-C  No. 4 ; pp. 520-526
Type of Manuscript:  Special Section PAPER (Special Section on Low-Power System LSI, IP and Related Technologies)
Category: 
Keyword: 
threshold voltagelow powerdual-Vthphysical synthesis
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A Realization of a Common-Source FG-MOSFET with a Simple Electronic Vth Adjustment Almost Irrelevant to the Amount of the Pre-stored Charge on the Floating Gate
Takahiro INOUE Eizo ICHIHARA Toshitaka YAMAKAWA Akio TSUNEDA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2004/03/01
Vol. E87-A  No. 3 ; pp. 753-756
Type of Manuscript:  LETTER
Category: Analog Signal Processing
Keyword: 
floating-gate MOSFETthreshold voltageVth adjustment
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A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3 ; pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
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An Equivalent MOSFET Cell Using Adaptively Biased Source-Coupled Pair
Hiroki SATO Akira HYOGO Keitaro SEKINE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2003/02/01
Vol. E86-A  No. 2 ; pp. 357-363
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
MOS analog circuitthreshold voltagesource-coupled pairadaptively bias technique
 Summary | Full Text:PDF

A Simplified Dopant Pile-Up Model for Process Simulators
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12 ; pp. 2117-2122
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
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A 100 nm Node CMOS Technology for System-on-a-Chip Applications
Kiyotaka IMAI Atsuki ONO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5 ; pp. 1057-1063
Type of Manuscript:  INVITED PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
CMOSthreshold voltagegate leakage currentoxynitride
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A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/09/01
Vol. E84-C  No. 9 ; pp. 1234-1239
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF

Low Power CMOS Design Challenges
Tadahiro KURODA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/08/01
Vol. E84-C  No. 8 ; pp. 1021-1028
Type of Manuscript:  INVITED PAPER (Special Issue on Silicon Nanodevices)
Category: 
Keyword: 
low power CMOS designlow voltagethreshold voltagesubthreshold leakage currentdownsizing
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Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6 ; pp. 771-776
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric-gate FETretention1T2Cmemory windowthreshold voltage
 Summary | Full Text:PDF

Random Modulation: Multi-Threshold-Voltage Design Methodology in Sub-2-V Power Supply CMOS
Naoki KATO Yohei AKITA Mitsuru HIRAKI Takeo YAMASHITA Teruhisa SHIMIZU Fuyuhiko MAKI Kazuo YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11 ; pp. 1747-1754
Type of Manuscript:  Special Section PAPER (Special Issue on Low-power LSIs and Technologies)
Category: 
Keyword: 
CMOSthreshold voltageleakage currentlow power
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Variable Threshold-Voltage CMOS Technology
Tadahiro KURODA Tetsuya FUJITA Fumitoshi HATORI Takayasu SAKURAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/11/25
Vol. E83-C  No. 11 ; pp. 1705-1715
Type of Manuscript:  INVITED PAPER (Special Issue on Low-power LSIs and Technologies)
Category: 
Keyword: 
low power CMOS designlow voltagethreshold voltagesubstrate bias
 Summary | Full Text:PDF

Inverse Modeling and Its Application to MOSFET Channel Profile Extraction
Hirokazu HAYASHI Hideaki MATSUHASHI Koichi FUKUDA Kenji NISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6 ; pp. 862-869
Type of Manuscript:  INVITED PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
inverse modelingdoping profile extractionMOSFETthreshold voltage
 Summary | Full Text:PDF

Neuron-MOSVT Cancellation Circuit and Its Application to a Low-Power and High-Swing Cascode Current Mirror
Koichi TANNO Jing SHEN Okihiko ISHIZUKA Zheng TANG 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1998/01/25
Vol. E81-A  No. 1 ; pp. 110-116
Type of Manuscript:  PAPER
Category: Analog Signal Processing
Keyword: 
neuron-MOS transistorthreshold voltageCMOS analog circuitcircuit theory and designintegrated circuit
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An Accurate Model of Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 905-910
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltage
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An Analytic Steady-State Current-Voltage Characteristics of Short Channel Fully-Depleted Surrounding Gate Transistor (FD-SGT)
Tetsuo ENDOH Tairiku NAKAMURA Fujio MASUOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/07/25
Vol. E80-C  No. 7 ; pp. 911-917
Type of Manuscript:  Special Section PAPER (Special Issue on New Concept Device and Novel Architecture LSIs)
Category: Novel Structure Devices
Keyword: 
SGTFD-SGTcurrent-voltage characteristicsthreshold voltageshort channel effect
 Summary | Full Text:PDF

A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs
Tsuneo INABA Daisaburo TAKASHIMA Yukihito OOWAKI Tohru OZAKI Shigeyoshi WATANABE Takashi OHSAWA Kazunori OHUCHI Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12 ; pp. 1699-1706
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
DRAMpower dissipationreliabilitybit-linewordlinesmall swingthreshold voltagesense amplifiermemory cell
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Design Methodology of Deep Submicron CMOS Devices for 1 V Operation
Hisato OYAMATSU Masaaki KINUGAWA Masakazu KAKUMU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/25
Vol. E79-C  No. 12 ; pp. 1720-1725
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
low voltagelow power dissipationthreshold voltageCMOS
 Summary | Full Text:PDF

1: n2 MOS Cascode Circuits and Their Applications
Koichi TANNO Okihiko ISHIZUKA Zheng TANG 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1996/12/25
Vol. E79-A  No. 12 ; pp. 2159-2165
Type of Manuscript:  PAPER
Category: Analog Signal Processing
Keyword: 
MOS analog circuitMOS LSIcircuit theory and designintegrated circuitthreshold voltage
 Summary | Full Text:PDF

Threshold Voltage Control Using Floating Back Gate for Ultra-Thin-Film SOI CMOS
Seiji FUJINO Kazuhiro TSURUTA Akiyoshi ASAI Tadashi HATTORI Yoshihiro HAMAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/12/25
Vol. E78-C  No. 12 ; pp. 1773-1778
Type of Manuscript:  PAPER
Category: Electronic Circuits
Keyword: 
SOIthreshold voltagewafer direct bondingfloating back gateelectric charge injectionring oscillator
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Design of a Novel MOS VT Extractor Circuit
Koichi TANNO Okihiko ISHIZUKA Zhen TANG 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9 ; pp. 1306-1310
Type of Manuscript:  LETTER
Category: Electronic Circuits
Keyword: 
MOS analog circuitthreshold voltageMOS LSIcircuit theory and designintegrated circuit
 Summary | Full Text:PDF

High-Speed and Low-Power n+-p+ Double-Gate SOI CMOS
Kunihiro SUZUKI Tetsu TANAKA Yoshiharu TOSAKA Hiroshi HORIE Toshihiro SUGII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4 ; pp. 360-367
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
MOSFETSOIdouble-gatehigh-speedlow-powerthreshold voltage
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A Proposal of New Multiple-Valued Mask-ROM Design
Yasushi KUBOTA Shinji TOYOYAMA Yoji KANIE Shuhei TSUCHIMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/04/25
Vol. E77-C  No. 4 ; pp. 601-607
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
semiconductor devicesmask-ROMmultiple-valuethreshold voltagechannel length
 Summary | Full Text:PDF