Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/06/01 Vol. E93-CNo. 6 ;
pp. 835-841 Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies) Category: Keyword: digital circuits, threshold voltage variation, compensation circuit, PVT variation,
Estimation of Yield Suppression for 1.5 V-1 Gbit DRAMs Caused by Threshold Voltage Variation of MOSFET due to Microscopic Fluctuation in Dopant Distributions Shigeyoshi WATANABETakaaki MINAMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/25 Vol. E77-CNo. 2 ;
pp. 273-279 Type of Manuscript: PAPER Category: Integrated Electronics Keyword: 1 Gbit DRAM, 1.5 V, yield, threshold voltage variation, redundancy,