Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2000/08/25 Vol. E83-CNo. 8 ;
pp. 1288-1294 Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99)) Category: Simulation Methodology and Environment Keyword: fully-depleted SOI, floating-body effect, parasitic channel leakage, systematic yield, process optimization,