Keyword : surface states


2D Device Simulation of AlGaN/GaN HFET Current Collapse Caused by Surface Negative Charge Injection
Yusuke IKAWA Yorihide YUASA Cheng-Yu HU Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8 ; pp. 1218-1224
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETcollapsevirtual gatepinningsurface statessimulation
 Summary | Full Text:PDF(709.6KB)

Gate Leakage in AlGaN/GaN Heterostructure Field Effect Transistors and Its Suppression by Novel Al2O3 Insulated Gate
Shinya OOTOMO Hideki HASEGAWA Tamotsu HASHIZUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10 ; pp. 2043-2050
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
GaNAlGaNleakage currentsurface statespassivation
 Summary | Full Text:PDF(813.1KB)

A Low Dark Current CCD Linear Image Sensor
Masao YAMAWAKI Yuichi KUNORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/01/25
Vol. E80-C  No. 1 ; pp. 154-159
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
CCDimage sensordark currentphotodiodestoragesurface stateslife time
 Summary | Full Text:PDF(472.4KB)