Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/04/01
Vol. E88-C
No. 4 ;
pp. 683-689
Type of Manuscript:
Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword:
device simulation, open-gated FET, AlGaN/GaN heterostructure, trap, surface state, interface state, |
