Keyword : surface potential


Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11 ; pp. 1817-1823
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETsbreakdownhigh-electric-field phenomenacompact modelsurface potential
 Summary | Full Text:PDF

Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Tatsuya OHGURO Takahiro IIZUKA Masahiko TAGUCHI Shunsuke MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/06/01
Vol. E92-C  No. 6 ; pp. 777-784
Type of Manuscript:  Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
Category: 
Keyword: 
accumulation-modeMOS varactorcarrier-transit delaynonquasi-static effectcompact modelsurface potentialcircuit simulationLC-VCOfrequency-tuning rangeFTRoscillation amplitude
 Summary | Full Text:PDF

Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5 ; pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
carrier dynamicslow voltagedisplacement currentcontinuity equationcarrier-transit delaynonquasi-static effectcompact MOSFET modeldriving capabilitydriftdiffusionsurface potentialcircuit simulation
 Summary | Full Text:PDF

A PN Junction-Current Model for Advanced MOSFET Technologies
Ryosuke INAGAKI Norio SADACHIKA Mitiko MIURA-MATTAUSCH Yasuaki INOUE 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2009/04/01
Vol. E92-A  No. 4 ; pp. 983-989
Type of Manuscript:  Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
HiSIMPN junction currentdiode currentsurface potential
 Summary | Full Text:PDF

A Study on Contact Spots of Earthquake Disaster Prevention Relays
Yoshitada WATANABE Yuichi HIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/08/01
Vol. E91-C  No. 8 ; pp. 1211-1214
Type of Manuscript:  Special Section PAPER (Special Section on Recent Development of Electromechanical Devices(Selected Papers from IS-EMD2007))
Category: Contact Phenomena
Keyword: 
earthquake disaster prevention relaycontact resistanceatomic force microscopesurface potential
 Summary | Full Text:PDF

Investigation of Single Monolayer Formation of the Evaporated Liquid Crystalline Molecules by the Surface Potential Measurement
Takaaki MANAKA Hajime HIGA Dai NAKAMURA Dai TAGUCHI Mitsumasa IWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/02/01
Vol. E87-C  No. 2 ; pp. 183-184
Type of Manuscript:  Special Section LETTER (Special Section on Recent Progress of Organic Molecular Electronics)
Category: Nano-interface Controlled Electronic Devices
Keyword: 
surface potentialliquid crystalmonolayer
 Summary | Full Text:PDF

100 nm-MOSFET Model for Circuit Simulation: Challenges and Solutions
Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Keiichi MORIKAWA Satoshi ITOH Akiyoshi KOBAYASHI Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/06/01
Vol. E86-C  No. 6 ; pp. 1009-1021
Type of Manuscript:  INVITED PAPER (Special Issue on Devices and Circuits for Next Generation Multi-Media Communication Systems)
Category: 
Keyword: 
MOSFET modelsurface potentialdevice phenomenaRF applications
 Summary | Full Text:PDF

Investigation of Surface Potential Occurring at Metal/Phthalocyanine Interfaces by Electro-Absorption Technique
Takaaki MANAKA Xiao Man CHENG Cheng Quan LI Mitsumasa IWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/06/01
Vol. E85-C  No. 6 ; pp. 1328-1329
Type of Manuscript:  Special Section LETTER (Special Issue on Recent Progress in Organic Molecular Electronics)
Category: Fabrication and Characterization of Thin Films
Keyword: 
surface potentialphthalocyanineelectro-absorption
 Summary | Full Text:PDF

Circuit Simulation Models for Coming MOSFET Generations
Mitiko MIURA-MATTAUSCH Hiroaki UENO Hans Juergen MATTAUSCH Shigetaka KUMASHIRO Tetsuya YAMAGUCHI Kyoji YAMASHITA Noriaki NAKAYAMA 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 2002/04/01
Vol. E85-A  No. 4 ; pp. 740-748
Type of Manuscript:  Special Section PAPER (Special Section of Selected Papers from the 14th Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
MOSFET modelsurface potentialcharge based modelingsub-100 nm technology
 Summary | Full Text:PDF

Nonlinear Characteristics of Insulating LB Films with Nanometer Thickness Sandwiched between Au-Au Contact
Isao MINOWA Mitsumasa IWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/03/25
Vol. E81-C  No. 3 ; pp. 330-336
Type of Manuscript:  Special Section PAPER (Special Issue on Electromechanical Devices and their Surface Science)
Category: 
Keyword: 
contactpolyimideLB filmAu-PI-Aunon-linearitydual frequency methodsurface potentialcontact potential difference
 Summary | Full Text:PDF